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Austriamicrosystems extends 0.35um high-voltage CMOS periphery library to include 8-kV ESD protection

May 02, 2012 | Paul Buckley | 222902217
Austriamicrosystems extends 0.35um high-voltage CMOS periphery library to include 8-kV ESD protection Austriamicrosystems' Full Service Foundry business unit is extending its 0.35 µm High-Voltage CMOS fabrication service to offer ESD protection up to 8 kV at 50 V and up to 4 kV at 120 V operating voltage in ICs.
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The ICs are fabricated on the companys specialist H35 process.

Austriamicrosystems ready to use ESD protection solution maximizes the ESD tolerance of complex analog/mixed-signal System-on-Chip designs in industrial, medical, communications and automotive markets.

The new silicon-proven ESD protection cells guarantee 1 kV, 2 kV, 4 kV and 8 kV HBM (Human Body Model) ESD protection compliant with the MIL-883H, Method 3015.8, JEDEC JESD22-A114F ESD and AEC-Q100 standards, as well as protection up to 500 V according to the CDM (Charged Device Model).

Austriamicrosystems is amongst the first foundries worldwide to offer proper ESD protection up to 8 kV at 50 V and 4 kV at 120 V on a CMOS-based High-Voltage process. The move is an extension of the companys More Than Silicon initiative, under which its foundry service provides a package of intellectual property, cell libraries, consultancy and testing services, in addition to wafer fabrication, to help customers successfully implement advanced analog and mixed-signal circuit designs.

The newly developed periphery library with built-in ESD protection structures offers latch up-free 8 kV HBM ESD protection for maximum supply voltages of 20 V and 50 V and 4 kV HBM at 120V. Furthermore it offers a built in latch-up robustness of 100 mA at 150 degrees Celsius according to JEDEC JESD78D, Nov. 2011. The new ESD protection cells have already been successfully used in various automotive products which easily passed the tough so-called Zwickau test (6 kV level according to IEC 61000-4-2 contacted; 330 Ohm/150 pF).
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