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NXP shrinks medium-power transistors

November 21, 2011 | Christoph Hammerschmidt | 222901922
NXP shrinks medium-power transistors NXP Semiconductors announced medium power transistors in a 2-mm x 2-mm 3-pin leadless DFN package. Offering a unique solution in an ultra-small DFN2020-3 (SOT1061) Surface-Mounted Device (SMD) plastic package, the BC69PA transistor is the first in a family of medium power transistors from NXP available in a miniature form factor - and, according to the vendor, it is the industry's first medium power transistor in this small form factor.

Suited for general-purpose power-sensitive applications in mobile, automotive, industrial and household appliances, the DFN2020-3 (SOT1061) packaging can save up to 80 percent more space on the PCB compared to conventional SOT89 packages, while maintaining high electrical performance of up to 2 Amps. When mounted on state-of-the-art 4-layer PCBs, its thermal performance matches much bigger standard SMD packages and allows Ptot levels of up to 1.1 W in a tiny footprint. Driven by miniaturization in chip design, NXP's ultra-compact medium power transistors offer design engineers a flexible power transistor solution for designs focusing on space saving, energy efficiency, and low heat dissipation. All NXP medium power transistors are automotive-qualified according to AEC-Q101.

“NXP is the first vendor to offer such a broadly differentiated choice of transistors in a tiny 2-mm x 2-mm 3-pin package, significantly expanding design options for engineers,” said Joachim Stange, product manager, NXP Semiconductors. “In charging circuits of mobile devices, tablet PCs and automotive electronics requiring smaller ICs, designers can now choose a medium power solution and not have to trade off PCB space for functionality. Simple applications such as interior car lighting which require only 1-2 Watts can be powered by an ultra-compact medium power solution.”

Key features of NXP medium power transistors include gigh current in a small leadless package with medium power capability; exposed heat sink for excellent thermal and electrical performance; VCEO ranging from 20 V to 80 V, and high collector current capability IC (up to 2A) and ICM (up to 3A).

For more information, visit NXP medium power transistors










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