Seven power MOSFETs target compact vehicle electronic control units
August 05, 2010 | Paul Buckley | 222901013
Renesas Electronics has introduced seven new power metal-oxide-semiconductor field-effect-transistor (MOSFET) products equipped in HSON packages for use in automotive electronics control units for applications including direct injection engine management and electric pump motor control.
Page 1 of 2The new products, including N-channel MOSFETs with voltage ratings of 40 V and 60 V and P-channel MOSFETs with a voltage rating of 30 V, can be used for solenoids and motor switching or to protect against reversed battery conditions.
The new products have the following features:
- Available in HSON packages that are approximately one-half the size of the existing TO-252 package,
- Can switch currents up to 75 A DC, and
- Support channel temperatures up to 175 degrees C. Of note, the NP75N04YUG device features continuous current of 75 A and a low on-resistance maximum rating of 4.8 m, the best-in-class performance among the industrys existing automotive power MOSFETs in equivalent packages.
Key features of the new power MOSFET devices are as follows.
Compact package approximately one-half the size of existing products
- The newly developed 8-pin HSON package has 48 percent the surface area of the previous TO-252 package. In spite of its compact size, the NP75N04YUG power MOSFET has a low channel-to-case thermal resistance (Note 1) of 1.09 degrees Celsius per watt (degrees C/W). Thus it can handle a maximum continuous power level of 138 W when the case temperature is fixed at 25 degrees C.
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