The new family of trench HEXFET power MOSFETs bears the type designation AUIRLS303x and is available across a range of voltages from 40 V to 200 V in a variety of surface mount device (SMD) packages. Both standard and logic level gate drive MOSFETs set a new standard of Rds(on) performance for IR's automotive plastic package MOSFET portfolio. Benchmark Rds(on) as low as 1.25 mohm max. at 40 V, 2.1 mohm max. at 60 V, 2.6 mohm max. at 75 V and 4.0 mohm max. at 100 V can be achieved. A number of the devices feature a maximum current rating of up to 240 A in a D2Pak-7P.
IR's automotive MOSFETs are subject to dynamic and static part average testing combined with 100 percent automated wafer level visual inspection as part of IR's automotive quality initiative targeting zero defects. AEC-Q101 qualification requires that there is no more than a 20 percent change in Rds(on) after 1,000 temperature cycles of testing. However, in extended testing IR's new AU bill of materials demonstrated a maximum Rds(on) shift of less than 10% at 5,000 temperature cycles, showing the strength and ruggedness of the bill of materials.
The new devices are qualified according to AEC-Q101 standards, feature an environmentally friendly, lead-free and RoHS compliant bill of materials.
Production orders are available immediately and spice models are available on request. Datasheets and qualification standards are available on the International Rectifier website at www.irf.com.