Advanced Power Electronics Corp. launches dual n- and p-channel MOSFETs for battery management applications

May 06, 2013 // By Paul Buckley
Advanced Power Electronics Corp. (USA) has introduced two power MOSFETs well-suited for battery management and protection applications, the AP9922GEO-HF-3 and AP9923GEO-HF-3, dual n- and dual p-channel enhancement-mode MOSFETs.

Both MOSFETs feature low on-resistance, 16 mΩ for the AP9922GEO-HF-3 and 25 mΩ for the AP9923GEO-HF-3, and both devices are capable of operating with gate drive down to 1.8 V. RoHS-compliant and halogen-free, the devices are available in the small, thin TSSOP-8 package.

More information about the AP9922GEO-HF-3 and AP9923GEO-HF-3 MOSFETs at www.a-powerusa.com/docs/AP9922GEO-3.pdf and www.a-powerusa.com/docs/AP9923GEO-3.pdf