The AUIRB24427S features high output current in excess of 6 A per channel across the full temperature range and is designed to drive large IGBT and MOSFET gates in modules or discrete packages. Due to the device’s low output impedance in turn-on and turn-off mode, power losses are also low, allowing operation in harsh and high temperature environments such as HEV power supply stages as a primary or secondary side driver.
Housed in a simple PSOIC-8N package and featuring ultra-low power dissipation, the AUIRB24427S claims to solve the problem of effectively driving large size IGBTs and MOSFETs used in high power SMPS applications and provides a smaller, simpler and more robust solution than existing discrete solutions currently available in the market.
The AUIRB24427S is available in a thermally enhanced PSOIC-8N package that delivers much higher thermal dissipation compared to standard DIL SMD packages enabling operation at a significantly higher ambient temperature. Additionally, the rail-to-rail output stage, using P-Channel MOSFETs in the high-side allows low internal dropout voltage to reduce power dissipation. The AUIRB24427S also features maximum output resistance of 650 mOhm sink and source at 125°C.
Availability and Pricing
Pricing for the AUIRB24427S begins at US $0.78 each in 10,000-unit quantities. Production orders are available immediately. The automotive-qualified device is lead-free and RoHS compliant.