Among the industry's first automotive-qualified dual MOSFETs in an asymmetric package, where the size of the low-side MOSFET is increased for lower conduction losses, the new MOSFETs offer high-temperature operation to +175 °C to provide the ruggedness and reliability required for applications anywhere inside vehicles. The devices are particularly well suited to vehicle telematics, such as the radio and GPS systems.
The devices offer designers a choice of different on-resistance values. At the 10 V rating, the SQJ940EP offers low maximum on-resistance of 6.4 mΩ for the Channel 2 low-side MOSFET and 16 mΩ for the Channel 1 high-side MOSFET. Compared with dual symmetrical solutions, the SQJ940EP offers 31 % lower low-side on-resistance while still maintaining a compact outline. The SQJ942EP offers maximum on-resistance of 11 mΩ at 10 V for the low-side MOSFET and 22 mΩ for the high-side MOSFET.
100 % Rg- and UIS-tested, the MOSFETs are RoHS-compliant and halogen-free.