First 1000V SiC MOSFET targets EV market

October 10, 2016 // By Graham Prophet
Wolfspeed has introduced a 1000V MOSFET that enables a reduction in overall system cost, while improving system efficiency and decreasing system size, in applications such as efficient electric vehicle fast battery chargers.

The company says that the FET offers system designers ultra-fast switching speeds with a fraction of a silicon MOSFET’s switching losses, “The figure-of-merit delivered by this device is beyond the reach of any competing silicon-based MOSFET.”


Designers can reduce component count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the 1000 Vds rating of the SiC MOSFET. The increase in output power in a reduced footprint is realized by the ultra-low output capacitance ―as low as 60 pF― which significantly lowers switching losses. This device enables operations at higher switching frequencies, which shrinks the size of the resonant tank elements and decreases overall losses, thus reducing heatsink requirements. Wolfspeed has determined these proof-points by constructing a 20 kW full-bridge resonant LLC converter and comparing it to a market-leading 15 kW silicon system.


Wolfspeed offers a 20 kW full-bridge resonant LLC converter reference design, listed as part number CRD-20DD09P-2. This fully assembled hardware set allows designers to evaluate the new 1000V SiC MOSFET and demonstrate its faster switching capability, as well as the increased system power density the device enables.


The LLC converter's reference design files, which include full schematics, bill of materials, simulation files, and detailed a user guide, can be found online at The full hardware is available for purchase from Wolfspeed.


The new 1000V, 65 mOhm MOSFET is available in a through-hole, 4L-TO247 package, is listed as part number C3M0065100K, and is currently available for purchase at Digikey, Mouser, and Richardson RFPD. Wolfspeed plans to release another 1000V MOSFET in a 4L-TO247 package at 120 mOhm (C3M0120100K) in the coming weeks. This package has a Kelvin-source connection that allows engineers to create designs that maximize the benefits of SiC’s superior speed and efficiency.


The surface mount versions of these devices, C3M0065100J and C3M0120100J, will be released later in 2016. Like the 4L-TO247, the surface mount devices