With a footprint of 5.0 x 6.5 mm, the GS66504B enhancement-mode GaN transistor is 50% smaller than competing devices, according to the company. The device is one of a family of 650-V devices that spans a range of 7 to 200 A.
GaN Systems claims to be the first company to have developed and brought a comprehensive product range of devices with current ratings from 7 A to 250 A to the global market. The company's Island Technology die design, combined with its low inductance and thermally efficient GaN PX packaging and Drive Assist technology means the company's GaN transistors offer a 40-fold improvement in switching and conduction performance over traditional silicon MOSFETs and IGBTs.
Devices are available now through the company's worldwide distribution network.