MOSFET H-bridge reduces footprint by 50%

January 21, 2015 // By Christoph Hammerschmidt
A pair of MOSFET H-bridges from Diodes Incorporated simplifies motor driving and inductive wireless charging circuits by cutting component count and reducing PCB footprint by 50%. With the DMHC4035LSD, rated at 40V, the manufacturer targets at automotive motor driving applications, whereas the 30V-rated H bridge, the DMHC3025LSD, is suitable for 12V single-phase fan applications.

By packaging dual N-channel and dual P-channel MOSFETs to make a full H-Bridge in just a single 5mm x 6mm SO-8 footprint, the DMHC3025LSD and DMHC4035LSD replace the equivalent four SOT23 or two SO-8 packages for a wide range of space-constrained automotive and industrial applications, including: low-power DC brushless motor driving, fan control and similar requirements for driving inductive loads.

Besides saving space, the H-bridges offer a low RDS(ON) of typically 45mΩ at 10V VGS and 65mΩ at -10V VGS, respectively, for the 40V N-channel and P-channel devices.  The minimal conduction losses resulting from the low on resistance mean the H-bridges are able to tolerate higher continuous current under motor stall conditions. Under +70ºC high ambient operating temperature, the 30V and 40V H-bridges can support continuous currents of 3A and 2A, respectively, thereby accommodating worst-case motor stall currents.

Both versions are priced at $0.40USD each in 10k quantities.
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