Silicon-Carbide MOSFET range extended at 1200V ratings

February 04, 2015 // By Graham Prophet
ST’s SCT20N120 silicon-carbide power MOSFETs will, the company asserts, brings advanced efficiency and reliability to a broader range of energy-conscious applications such as inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment.

The 1200V SCT20N120 extends the family, with on-resistance (RDS(ON)) better than 290 mΩ up to the 200°C maximum operating junction temperature. Switching performance is also consistent over temperature thanks to highly stable turn-off energy (Eoff) and gate charge (Qg). The resulting low conduction and switching losses, combined with ultra-low leakage current, simplify thermal management and maximise reliability.

In addition to their lower energy losses, ST’s silicon-carbide MOSFETs permit switching frequencies up to three times higher than similar-rated silicon IGBTs allow. This enables designers to specify smaller external components and save size, weight, and bill-of-materials costs. The SCT20N120’s high-temperature capability helps to simplify cooling-system design in applications such as power modules for electric vehicles.

SCT20N120 comes in ST’s proprietary HiP247 package with enhanced thermal efficiency, which allows reliable operation up to 200°C while maintaining compatibility with the industry-standard TO-247 power-package outline. Devices cost from $8.50 (1000).